Effects of sputtering power on electrical and structural properties of as-deposited Sn¬-0.03-GaN films with a single cermet target
2 years ago
Authors:
Cao Phương Thảo
Publication date:
10 / 06 / 2021
Name of Publishers:
Hội thảo khoa học cấp trường (RET 4)
Abstract:
The Sn-doped GaN films have been grown at sputtering power from 90 W to 150 W on Si (100) substrates by radio-frequency (RF) reactive sputtering technique in an (Ar and N2) atmosphere. The sputtering power condition effects on the structural, optical and electrical properties of these Sn-0.03-GaN films were studied throughly. The results of study that all Sn-doped GaN thin films possessed a wurtzite crystalline structure. The Sn-GaN films were thicker and smoother at higher sputtering power. The electron concentration and mobility tested by the Hall effect measurement were 20.4 cm2V-1s-1 at RF power of 150 W, respectively. The bandgap of Sn-doped GaN films decreased as sputtering power increased. All as-deposited Sn-GaN films had the smaller bandgap of 3.0 eV that were explained due to intrinsic defects and lattice distortion.