The effect of RF sputtering conditions on the physical characteristics of deposited GeGaN thin film
4 years ago
Authors:
Nguyễn Hoàng Vũ,Kim Anh Tuấn
Publication date:
02 / 06 / 2019
Name of Publishers:
microelectronics engineering journal
Abstract:
Ge0.07GaN films were successfully made on Si (100), SiO2/Si (100) substrates by radio frequency reactive sputtering technique at various deposition conditions listed as a range of 100 - 400 oC and 90 - 150 W with a single ceramic target containing 7 at% dopant Ge. The results showed that different RF sputtering power and heating temperature conditions affected the structural, electrical and optical properties of sputtered Ge0.07GaN films. The as-deposited Ge0.07GaN films had in structural polycrystalline. The GeGaN films conducted a distortion structure at different growth conditions. The deposited-150 W Ge0.07GaN film owned the lowest photoenergy of 2.96 eV and obtained the highest electron concentration of 5.50 × 1019 cm-3 and carrier conductivity of 35.2 S.cm-1 and mobility of 4 cm2.V-1.S-1.