INFLUENCES OF DEPOSITION TEMPERATURE CONDITION ON ELECTRICAL - OPTICAL AND STRUCTURAL PROPERTIES OF Sn-0.03-GaN THIN FILMS BY USING RF REACTIVE SPUTTERING TECHNOLOGY
1 year ago
Authors:
Cao Phương Thảo,Thi Trần Anh Tuấn
Publication date:
04 / 07 / 2022
Name of Publishers:
Hội thҧo quӕc gia thường niên vӅ Địn tử công suất và ứng dụng (SWPEA2022)
Abstract:
The Sn-0.03-GaN films have been successfully sputtered
at different deposition temperature in range of 100-400
o
C on p-Si (100) substrates by radio-frequency (RF)
reactive sputtering technology in a mixing Ar and N2
gases. The heating temperature substrate condition has
affected on the structural, optical and electrical properties
of these Sn-0.03-GaN films were investigated throughly.
The studying results determined that that all Sn-0.03-GaN thin films at different sputtering RF temperature
from 100 to 400
o
C possessed a structural wurtzite
crystalline. These Sn-GaN films were denser and
smoother at higher deposition temperature. The carrier
concentration and mobility tested by the Hall effect
measurement at room temperature were 2.54 10
19
cm
-3
and 20.4 cm
2
V
-1
s
-1
for the Sn-GaN film at 400
o
C of
heating temperature. The bandgap of Sn-doped GaN
films decreased as sputtering power increased. The Sn-0.03 GaN films had a decrease in energy bandgap from
2.83 to 2.62 eV that were believed due to an increase in
heating temperature substrate relate to improving the Sn
solubility in GaN