The Effect of RF Sputtering Temperature Conditions on the Structural and Physical Properties of Grown SbGaN Thin Film
2 years ago
Authors:
Cao Phương Thảo,t,t
Publication date:
23 / 06 / 2021
Name of Publishers:
Coatings
Abstract:
By using a single ceramic SbGaN target containing a 14% Sb dopant, Sb 0.14 GaN films were successfully grown on n-Si (100), SiO 2/Si (100), and quartz substrates by an RF reactive sputtering technology at different growth temperatures, ranging from 100 to 400 C. As a result, the structural characteristics, and optical and electrical properties of the deposited Sb 0.14 GaN films were affected by the various substrate temperature conditions. By heating the temperature deposition differently, the sputtered Sb 0.14 GaN films had a wurtzite crystal structure with a preferential (10 1 0) plane, and these Sb 0.14 GaN films experienced a structural distortion and exhibited p-type layers. At the highest depositing temperature of 400 C, the Sb 0.14 GaN film had the smallest bandgap energy of 2.78 eV, and the highest hole concentration of 8.97× 10 16 cm− 3, a conductivity of 2.1 Scm− 1, and a high electrical mobility of 146 cm 2 V− 1 s− 1. The p-Sb 0.14 GaN/n-Si heterojunction diode was tested at different temperatures, ranging from 25 to 150 C. The testing data showed that the change of testing temperature affected the electrical characteristics of the diode