Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1− xN/n–Si Hetero-Junction Diodes without Using Buffer Layer
4 years ago
Authors:
Cao Phương Thảo,Thi Trần Anh Tuấn,Phạm Quốc Phong,Nghị Vĩnh Khanh,Trần Nguyễn Phương Lan
Publication date:
22 / 12 / 2019
Name of Publishers:
Coatings
Abstract:
The modeling of p–In x Ga 1− x N/n–Si hetero junction diodes without using the buffer layer were investigated with the “top-top” electrode. The p–Mg-GaN and p–Mg-In 0.05 Ga 0.95 N were deposited directly on the n–Si (100) wafer by the RF reactive sputtering at 400 C with single cermet targets. Al and Pt with the square size of 1 mm 2 were used for electrodes of p–In x Ga 1− x N/n–Si diodes. Both devices had been designed to prove the p-type performance of 10% Mg-doped in GaN and InGaN films. By Hall measurement at the room temperature (RT), the holes concentration and mobility were determined to be N p= 3.45× 10 16 cm− 3 and µ= 145 cm 2/V· s for p–GaN film, N p= 2.53× 10 17 cm− 3, and µ= 45 cm 2/V· s for p–InGaN film. By the I–V measurement at RT, the leakage currents at− 5 V and turn-on voltages were found to be 9.31× 10− 7 A and 2.4 V for p–GaN/n–Si and 3.38× 10− 6 A and 1.5 V for p–InGaN/n–Si diode. The current densities at the forward bias of 20 V were 0.421 and 0.814 A· cm− 2 for p–GaN/n–Si and p–InGaN/n–Si devices. The electrical properties were measured at the temperature range of 25 to 150 C. By calculating based on the TE mode, Cheungs’ and Norde methods, and other parameters of diodes were also determined and compared.