The Effect of RF Sputtering Conditions on the Physical Characteristics of Deposited GeGaN Thin Film
4 years ago
Authors:
Cao Phương Thảo,Thi Trần Anh Tuấn,Kim Anh Tuấn,Nguyễn Hoàng Vũ,Thạch Thị Via Sa Na,Khấu Văn Nhựt
Publication date:
06 / 10 / 2019
Name of Publishers:
Coatings
Abstract:
Ge 0.07 GaN films were successfully made on Si (100), SiO 2/Si (100) substrates by a radio frequency reactive sputtering technique at various deposition conditions listed as a range of 100–400 C and 90–150 W with a single ceramic target containing 7 at% dopant Ge. The results showed that different RF sputtering power and heating temperature conditions affected the structural, electrical and optical properties of the sputtered Ge 0.07 GaN films. The as-deposited Ge 0.07 GaN films had an structural polycrystalline. The GeGaN films had a distorted structure under different growth conditions. The deposited-150 W Ge 0.07 GaN film exhibited the lowest photoenergy of 2.96 eV, the highest electron concentration of 5.50× 10 19 cm− 3, a carrier conductivity of 35.2 S∙ cm− 1 and mobility of 4 cm 2· V− 1∙ s− 1.