Electrical and structural characteristics of Ge-doped GaN thin films and its hetero-junction diode made all by RF reactive sputtering
4 years ago
Authors:
Cao Phương Thảo,ten
Publication date:
19 / 10 / 2017
Name of Publishers:
Materials Science in Semiconductor Processing
Abstract:
The Ge-x-GaN thin films were grown on Si (100) substrates by RF reactive sputtering technology with single
cermet targets at the Ge/(Ge + Ga) molar ratios of x = 0, 0.03, 0.07 and 1. The Ge-x-GaN films had a wurtzite
structure with a preferential (1010) plane. The SEM images showed that Ge-GaN films were smooth, continuous,
free from cracks and holes, and possessed grains in nanometer-size. All Ge-x-GaN films remained as n-type.
While the highest conductivity was found to be 1.46 S cm−1 in Ge-0.03-GaN film due to the highest carrier
concentration of 2.55 × 1018 cm−3
. Additionally, we made the n/p diodes with Ge-doped GaN films as n-type
layers deposited on Si (100) substrate as p-type layer using by RF reactive sputtering technique. Their electronics
characteristics were evaluated in terms of the barrier height, ideality factor, and series resistance.