Electrical and structural characteristics of tin-doped GaN thin films and its hetero-junction diode made all by RF reactive sputtering
4 years ago
Authors:
Cao Phương Thảo,ten,ten
Publication date:
05 / 12 / 2016
Name of Publishers:
Materials Science in Semiconductor Processing
Abstract:
Tin (Sn) doping in gallium nitride (GaN) has been mainly reported from the theoretical view only. Based upon
the availability of Sn precursor and commercialization, Sn-GaN film has not been deposited magnetron
sputtering until this work. By using the cheap and safe reactive sputtering technique, here we present Sn-GaN
thin films with single cermet targets at the Sn/(Sn+Ga) molar ratios of x=0, 0.03, 0.07, and 0.1 to form Sn-xGaN films under the atmosphere of the mixture of Ar and N2. The Sn-GaN films had the wurtzite structure. Sn
can be added to GaN to form SnGaN alloy with a maximal amount of ~10%. The structural, electrical, and
optical properties had changed with the Sn content until the oversaturation of Sn in Sn-0.1-GaN. The Sn doping
led to the lattice expansion, worsened crystallinity, n-type GaN, increased electrical concentration, decreased
the electrical mobility etc. Moreover, n-Sn-x-GaN/p-Si diodes were successfully made and their performance
was evaluated in terms of the barrier height, ideality factor, and series resistance. This work has opened the door
for studying the different kinds of dopants on the important III nitrides.